منابع مشابه
Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the presence of etch pits ranging in size from 0.01 to 2 mm and they were strongly dependent on the electrochemical etching conditions. The etch pits chemical composition consists of O, Ga and As whereas the porous structure c...
متن کاملAbsorption near band edges in heavily doped GaAs.
The optical-absorption coefficient o.(m) in heavily doped nand p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME) which follows from this theory. The present calculation of a(m) begins with the density of electron states (DOS) an...
متن کاملRaman Spectroscopic Studies of ZnSe/GaAs Interfaces
ZnSe/semi-insulating GaAs interfaces have been studied by observing Photogenerated plasmon – LO (PPL) coupled modes by non-resonant microRaman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial layers. The PPL mode in GaAs is observed in micro-Raman spectra for all samples, but with different magn...
متن کاملDi-Carbon Defects in Annealed Highly Carbon Doped GaAs
Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm21 in GaAs codoped with C and C after annealing at 850 ±C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom...
متن کاملHeavily carbon-doped GaAsSb grown on InP for HBT applications
We present the results of Hall measurements on heavily carbon-doped GaAsSb epilayers grown by metalorganic chemical vapour deposition (MOVPE) on InP substrates. An extremely strong alloy scattering e!ect is observed in this material, dominating the Hall mobility even at doping levels in the 1019 range. This e!ect is due to the very large (1 eV) valence band o!set between GaAs and GaSb. Despite ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1999
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.370536